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Composite Transistors
XN04505 (XN4505)
NPN epitaxial planer transistor
Unit: mm
For general amplification (Tr1) For amplification of low frequency output (Tr2)
2.8 -0.3 0.650.15 6
+0.2 +0.25
1.5 -0.05
0.650.15 1
0.3 -0.05
0.5 -0.05
G G
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
1.1-0.1
+0.2
0.95
I Features
0.95
2.9 -0.05
1.90.1
+0.2
5
2
4
3
I Basic Part Number of Element
G
0.40.2
I
Absolute Maximum Ratings (Ta=25C)
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 60 50 7 100 200 25 20 12 0.5 1 300 150 -55 to +150 Unit V V V mA mA V V V A A mW C C
1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin)
Marking Symbol: DZ Internal Connection
6 5 4 Tr1 1 2 3
Tr1
Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage
Tr2
Emitter to base voltage Collector current Peak collector current Total power dissipation
Tr2
Overall Junction temperature Storage temperature
Note.) The Part number in the Parenthesis shows conventional part number.
0 to 0.05
2SD0601A(2SD601A) + 2SD1328
0.1 to 0.3
0.8
0.16-0.06
+0.1
1.450.1
+0.1
+0.1
1
Composite Transistors
XN04505
(Ta=25C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.1 150 3.5 min 60 50 7 0.1 100 460 0.3 V MHz pF typ max Unit V V V A A
I Electrical Characteristics
G
Tr1
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
G
Tr2
Parameter Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 0.5A*1 VCE = 2V, IC = 1A*1 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 20mA VCB = 10V, IE = -50mA VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 200 60 0.13 0.4 1.2 V V MHz pF min 25 20 12 0.1 800 typ max Unit V V V A
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance
*1 *2
Pulse measurement Ron test circuit
1k IB=1mA f=1kHz V=0.3V
Common characteristics chart PT -- Ta
500
VB
VV
VA
Total power dissipation PT (mW)
VB 1000() Ron= VA-VB
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (C)
2
Composite Transistors
Characteristics charts of Tr1 IC -- VCE
60 Ta=25C IB=160A 50
XN04505
IB -- VBE
1200 VCE=10V Ta=25C 1000 200 240
IC -- VBE
VCE=10V
Collector current IC (mA)
Base current IB (A)
140A 40 120A 100A 30 80A 20 60A 40A 10 20A 0 0 2 4 6 8 10
800
Collector current IC (mA)
160
600
120 Ta=75C 80
25C
-25C
400
200
40
0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.4 0.8 1.2 1.6 2.0
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
IC -- IB
240 VCE=10V Ta=25C 200 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 600
hFE -- IC
VCE=10V
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C
Forward current transfer ratio hFE
500
Collector current IC (mA)
160
400
Ta=75C 25C -25C
120
300
80
200
40
100
0 0 200 400 600 800 1000
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
30
100
Base current IB (A)
Collector current IC (mA)
Collector current IC (mA)
fT -- IE
300 VCB=10V Ta=25C
Transition frequency fT (MHz)
240
180
120
60
0 -0.1 -0.3
-1
-3
-10
-30
-100
Emitter current IE (mA)
3
Composite Transistors
Characteristics charts of Tr2 IC -- VCE
1.2 IB=4.0mA 1.0 100
XN04505
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IC/IB=25 100
VBE(sat) -- IC
IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C -25C
30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Collector current IC (A)
3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 0.5mA
25C
0 0 1 2 3 4 5 6
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Collector to emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
1200 VCE=2V 400 350 300 250 200 150 100 50 0 0.01 0.03 0 -1
fT -- I E
24
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=10V Ta=25C
Forward current transfer ratio hFE
1000
Transition frequency fT (MHz)
20
f=1MHz IE=0 Ta=25C
800 Ta=75C 600 25C -25C
16
12
400
8
200
4
0
-2 -3 -5 -10 -20 -30 -50 -100
0.1
0.3
1
3
10
1
2
3
5
10
20 30 50
100
Collector current IC (A)
Emitter current IE (mA)
Collector to base voltage VCB (V)
4
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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